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FDS4435BZ Datasheet, Fairchild Semiconductor

FDS4435BZ mosfet equivalent, p-channel powertrench mosfet.

FDS4435BZ Avg. rating / M : 1.0 rating-19

datasheet Download (Size : 249.64KB)

FDS4435BZ Datasheet

Features and benefits


* Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A
* Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A
* Extended VGSS range (-25V) for battery applications
* HBM.

Application


* HBM ESD protection level of ±3.8KV typical (note 3)
* High performance trench technology for extremely low rDS.

Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications com.

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TAGS

FDS4435BZ
P-Channel
PowerTrench
MOSFET
Fairchild Semiconductor

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